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High-k dielectrics and metal gates for future generation memory devices

dc.contributor.authorKittl, Jorge
dc.contributor.authorOpsomer, Karl
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorMenou, Nicolas
dc.contributor.authorKaczer, Ben
dc.contributor.authorWang, Xin Peng
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorTomida, Kazuyuki
dc.contributor.authorRothschild, Aude
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorSchaekers, Marc
dc.contributor.authorZahid, Mohammed
dc.contributor.authorDelabie, Annelies
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorPolspoel, W.
dc.contributor.authorClima, Sergiu
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorKnaepen, W.
dc.contributor.authorDetavernier, C.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorBlomberg, T.
dc.contributor.authorPierreux, Dieter
dc.contributor.authorSwerts, Johan
dc.contributor.authorFischer, P.
dc.contributor.authorMaes, Jan
dc.contributor.authorManger, D.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorBrijs, Bert
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-17T23:29:26Z
dc.date.available2021-10-17T23:29:26Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15603
dc.sourceIIOimport
dc.titleHigh-k dielectrics and metal gates for future generation memory devices
dc.typeProceedings paper
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorTomida, Kazuyuki
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorPierreux, Dieter
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage29
dc.source.endpage40
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS. 5: New Materials, Processing, and Equipment
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 19, issue 1


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