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Performance of high-k gate dielectric graphene field-effect devices

dc.contributor.authorKlekachev, Alexander
dc.contributor.authorCantoro, Mirco
dc.contributor.authorNourbakhsh, Amirhasan
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorClemente, Francesca
dc.contributor.authorSels, Bert
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-17T23:30:22Z
dc.date.available2021-10-17T23:30:22Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15605
dc.sourceIIOimport
dc.titlePerformance of high-k gate dielectric graphene field-effect devices
dc.typeMeeting abstract
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1315
dc.source.conference215th ECS Meeting
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMeeting Abtsracts; Vol. 2009-01


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