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High depth resolution analysis of Si/SiGe multilayers with the atom probe

dc.contributor.authorKoelling, Sebastian
dc.contributor.authorGilbert, Matthieu
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-17T23:33:09Z
dc.date.available2021-10-17T23:33:09Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15615
dc.sourceIIOimport
dc.titleHigh depth resolution analysis of Si/SiGe multilayers with the atom probe
dc.typeJournal article
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage144106
dc.source.journalApplied Physics Letters
dc.source.issue14
dc.source.volume95
imec.availabilityPublished - open access


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