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Mg doped p-type GaN layers on Si templates by molecular beam epitaxy

dc.contributor.authorLieten, Ruben
dc.contributor.authorMotsnyi, Vasyl
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T00:03:16Z
dc.date.available2021-10-18T00:03:16Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15719
dc.sourceIIOimport
dc.titleMg doped p-type GaN layers on Si templates by molecular beam epitaxy
dc.typeOral presentation
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorMotsnyi, Vasyl
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMotsnyi, Vasyl::0000-0001-5297-9298
dc.source.peerreviewno
dc.source.conferenceInternational Symposium on Compound Semiconductors
dc.source.conferencedate30/08/2009
dc.source.conferencelocationSanta Barbara, CA USA
imec.availabilityPublished - imec


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