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dc.contributor.authorLin, Dennis
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMartens, Koen
dc.contributor.authorDe Valicourt, Guilhem
dc.contributor.authorNegre, Laurent
dc.contributor.authorWang, Wei-E
dc.contributor.authorTsai, Wilman
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T00:04:10Z
dc.date.available2021-10-18T00:04:10Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15722
dc.sourceIIOimport
dc.titleThe Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces
dc.typeJournal article
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage153508
dc.source.journalApplied Physics Letters
dc.source.volume94
dc.identifier.urlhttp://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000094000015153508000001&idtype=cvips&prog=search
imec.availabilityPublished - imec


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