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dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorOkushima, Mototsugu
dc.contributor.authorScholz, Mirko
dc.contributor.authorBorremans, Jonathan
dc.contributor.authorDehan, Morin
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T00:06:18Z
dc.date.available2021-10-18T00:06:18Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15728
dc.sourceIIOimport
dc.titleA 4.5 kV HBM, 300 V CDM, 1.2 kV HMM ESD protected DC-to-16.1 GHz wideband LNA in 90 nm CMOS
dc.typeProceedings paper
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5A.6
dc.source.conference31st Annual EOS/ESD Symposium
dc.source.conferencedate30/08/2009
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - open access


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