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The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorCrawley, J. A.
dc.contributor.authorThrush, E. J.
dc.contributor.authorMiddleton, P. G.
dc.contributor.authorTrager Cowan, C.
dc.contributor.authorO'Donnell, K. P.
dc.date.accessioned2021-09-29T15:38:30Z
dc.date.available2021-09-29T15:38:30Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1573
dc.sourceIIOimport
dc.titleThe effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.source.peerreviewno
dc.source.beginpage231
dc.source.endpage236
dc.source.conferenceGallium Nitride and Related Materials; 27 November - 1 December 1995; Boston, MA, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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