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Accurate models for EUV simulation and their use for design correction

dc.contributor.authorLorusso, Gian
dc.contributor.authorHermans, Jan
dc.contributor.authorBaudemprez, Bart
dc.contributor.authorHendrickx, Eric
dc.contributor.authorKlostermann, Ulrich K.
dc.contributor.authorJang, Stephen
dc.contributor.authorZavyalova, Lena
dc.contributor.authorSorensen, Jacob
dc.contributor.authorGao, Weimin
dc.contributor.authorLucas, Kevin
dc.date.accessioned2021-10-18T00:13:38Z
dc.date.available2021-10-18T00:13:38Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15752
dc.sourceIIOimport
dc.titleAccurate models for EUV simulation and their use for design correction
dc.typeProceedings paper
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorHermans, Jan
dc.contributor.imecauthorBaudemprez, Bart
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.orcidimecHermans, Jan::0000-0003-1249-8902
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceInternational Symposium on Extreme Ultraviolet Lithography
dc.source.conferencedate18/10/2009
dc.source.conferencelocationPrague Czech Republic
imec.availabilityPublished - open access
imec.internalnotese-proceedings Sematech-website


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