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Low-frequency noise of strained and non-strained n-channel tri-gate FinFETs with different gate dielectrics

dc.contributor.authorLukynachikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorKudina, V.
dc.contributor.authorSmolanka, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T00:19:16Z
dc.date.available2021-10-18T00:19:16Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15771
dc.sourceIIOimport
dc.titleLow-frequency noise of strained and non-strained n-channel tri-gate FinFETs with different gate dielectrics
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage291
dc.source.endpage294
dc.source.conference20th International Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate14/06/2009
dc.source.conferencelocationPisa Italy
imec.availabilityPublished - open access
imec.internalnotesAIP Conference Proceedings; Vol. 1129


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