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1/f Noise in drain and gate current of MOSFETs with high-k gate stacks

dc.contributor.authorMagnone, P.
dc.contributor.authorCrupi, F.
dc.contributor.authorGiusi, G.
dc.contributor.authorPace, C.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorPantisano, Luigi
dc.contributor.authorMaji, D.
dc.contributor.authorRao, V.R.
dc.contributor.authorSrinivasan, P.
dc.date.accessioned2021-10-18T00:23:39Z
dc.date.available2021-10-18T00:23:39Z
dc.date.issued2009
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15785
dc.sourceIIOimport
dc.title1/f Noise in drain and gate current of MOSFETs with high-k gate stacks
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage180
dc.source.endpage189
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue2
dc.source.volume9
imec.availabilityPublished - open access


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