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dc.contributor.authorMalinowski, Pawel
dc.contributor.authorJohn, Joachim
dc.contributor.authorLorenz, Anne
dc.contributor.authorCheng, Kai
dc.contributor.authorDerluyn, Joff
dc.contributor.authorGermain, Marianne
dc.contributor.authorDe Moor, Piet
dc.contributor.authorMinoglou, Kiki
dc.contributor.authorBarkusky, Frank
dc.contributor.authorBayer, Armin
dc.contributor.authorMann, Klaus
dc.contributor.authorDuboz, Jean-Yves
dc.contributor.authorSemond, Fabrice
dc.contributor.authorHochedez, Jean-Francois
dc.contributor.authorGiordanengo, Boris
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-18T00:26:48Z
dc.date.available2021-10-18T00:26:48Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15794
dc.sourceIIOimport
dc.titleRadiation hardness of Al(x)Ga(1-x)N photodetectors exposed to Extreme UltraViolet (EUV) light beam
dc.typeProceedings paper
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorDe Moor, Piet
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.source.peerreviewno
dc.source.conferenceEuropean Optics & Optoelectronics Symposium
dc.source.conferencedate20/04/2009
dc.source.conferencelocationPrague Czech Republic
imec.availabilityPublished - imec


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