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Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures
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1892 since deposited on 2021-10-18
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Acq. date: 2025-10-24
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Views
1892 since deposited on 2021-10-18
409item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations