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Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures
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1896 since deposited on 2021-10-18
1last month
Acq. date: 2025-12-16
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Views
1896 since deposited on 2021-10-18
1last month
Acq. date: 2025-12-16
Citations