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Molecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOS

dc.contributor.authorMerckling, Clement
dc.contributor.authorPenaud, Julien
dc.contributor.authorKohen, David
dc.contributor.authorBellenger, Florence
dc.contributor.authorAlian, AliReza
dc.contributor.authorBrammertz, Guy
dc.contributor.authorEl-Kazzi, Mario
dc.contributor.authorHoussa, Michel
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T00:45:58Z
dc.date.available2021-10-18T00:45:58Z
dc.date.issued2009
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15854
dc.sourceIIOimport
dc.titleMolecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOS
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1592
dc.source.endpage1595
dc.source.journalMicroelectronic Engineering
dc.source.issue7_9
dc.source.volume86
dc.identifier.urlhttp://www.sciencedirect.com.gate6.inist.fr/science?_ob=ArticleURL&_udi=B6V0W-4VTVPRR-2&_user=4013381&_rdoc=1&_fmt=&_orig=search
imec.availabilityPublished - open access
imec.internalnotespaper from INFOS 2009


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