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Molecular beam deposition of Gd2O3 films on GeO2/Ge passivated III-V compound substrates (GaAs, In0.15Ga0.85As) prepared by atomic hydrogen cleaning

dc.contributor.authorMolle, Alessandro
dc.contributor.authorSpiga, Sabina
dc.contributor.authorAndreozzi, Andrea
dc.contributor.authorFanciulli, Marco
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-18T00:56:23Z
dc.date.available2021-10-18T00:56:23Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15885
dc.sourceIIOimport
dc.titleMolecular beam deposition of Gd2O3 films on GeO2/Ge passivated III-V compound substrates (GaAs, In0.15Ga0.85As) prepared by atomic hydrogen cleaning
dc.typeOral presentation
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium C: CMOS Gate-Stack Scaling
dc.source.conferencedate13/04/2009
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesC10.4


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