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Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing

dc.contributor.authorMorassi, L.
dc.contributor.authorLarcher, L.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorPadovani, A.
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZahid, Mohammed
dc.contributor.authorO'Sullivan, Barry
dc.date.accessioned2021-10-18T00:57:20Z
dc.date.available2021-10-18T00:57:20Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15888
dc.sourceIIOimport
dc.titleAdvanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage294
dc.source.endpage295
dc.source.conferenceInternational Conference on Solid-State Devices and Materials - SSDM
dc.source.conferencedate7/10/2009
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - open access


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