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Investigation of capacitance-voltage characteristics in Ge /high-k MOS devices

dc.contributor.authorMoreau, M.
dc.contributor.authorMunteanu, D.
dc.contributor.authorAutran, J.-L.
dc.contributor.authorBellenger, Florence
dc.contributor.authorMitard, Jerome
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-18T00:57:41Z
dc.date.available2021-10-18T00:57:41Z
dc.date.issued2009
dc.identifier.issn0022-3093
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15889
dc.sourceIIOimport
dc.titleInvestigation of capacitance-voltage characteristics in Ge /high-k MOS devices
dc.typeJournal article
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1171
dc.source.endpage1175
dc.source.journalJournal of Non-Crystalline Solids
dc.source.issue18
dc.source.volume355
imec.availabilityPublished - imec


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