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Quantum simulation of C-V and I-V characteristics in Ge and III-V materials/High-k MOS devices

dc.contributor.authorMoreau, Mathieu
dc.contributor.authorMunteanu, Daniela
dc.contributor.authorAutran, Jean-Luc
dc.contributor.authorBellenger, Florence
dc.contributor.authorMitard, Jerome
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-18T00:58:01Z
dc.date.available2021-10-18T00:58:01Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15890
dc.sourceIIOimport
dc.titleQuantum simulation of C-V and I-V characteristics in Ge and III-V materials/High-k MOS devices
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage1194-A02-02
dc.source.conferenceHigh-k Dielectrics on Semiconductors with High Carrier Mobility
dc.source.conferencedate30/11/2009
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1194


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