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Atomic layer deposition: nucleation and growth behavior of HfO2 dielectrics on semiconductor surfaces

dc.contributor.authorNyns, Laura
dc.date.accessioned2021-10-18T01:12:45Z
dc.date.available2021-10-18T01:12:45Z
dc.date.issued2009-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15933
dc.sourceIIOimport
dc.titleAtomic layer deposition: nucleation and growth behavior of HfO2 dielectrics on semiconductor surfaces
dc.typePHD thesis
dc.contributor.imecauthorNyns, Laura
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.contributor.thesisadvisorDe Gendt, Stefan
dc.contributor.thesisadvisorVinckier, Chris
imec.availabilityPublished - open access


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