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dc.contributor.authorO'connor, Eamon
dc.contributor.authorMonaghan, S.
dc.contributor.authorLong, R.D.
dc.contributor.authorO'Mahony, A.
dc.contributor.authorPovey, I.M.
dc.contributor.authorCherkaoui, K.
dc.contributor.authorPemble, M.E.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorHeyns, Marc
dc.contributor.authorNewcomb, S.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorHurley, P.
dc.date.accessioned2021-10-18T01:13:45Z
dc.date.available2021-10-18T01:13:45Z
dc.date.issued2009-03
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15936
dc.sourceIIOimport
dc.titleTemperature and frequency dependent electrical characterization of HfO2/InxGa1xAs interfaces using capacitance-voltage and conductance methods
dc.typeJournal article
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.source.peerreviewyes
dc.source.beginpage102902
dc.source.journalApplied Physics Letters
dc.source.issue10
dc.source.volume94
dc.identifier.urlhttp://scitation.aip.org/vsearch/servlet/VerityServlet?KEY=APPLAB&ONLINE=YES&smode=strresults&sort=chron&maxdisp=25&threshold=0&
imec.availabilityPublished - imec


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