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Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

dc.contributor.authorOrtolland, Claude
dc.contributor.authorMathew, Suraj
dc.contributor.authorDuffy, Ray
dc.contributor.authorSaino, Kanta
dc.contributor.authorKim, Chul Sung
dc.contributor.authorMertens, Sofie
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorVrancken, Christa
dc.contributor.authorChiarella, Thomas
dc.contributor.authorKerner, Christoph
dc.contributor.authorAbsil, Philippe
dc.contributor.authorLauwers, Anne
dc.contributor.authorBiesemans, Serge
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-18T01:18:30Z
dc.date.available2021-10-18T01:18:30Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15949
dc.sourceIIOimport
dc.titleCarbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage150
dc.source.conference10th International Conference on Ultimate Integration of Silicon - ULIS
dc.source.conferencedate18/03/2009
dc.source.conferencelocationAachen Germany
imec.availabilityPublished - imec


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