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Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology

dc.contributor.authorOrtolland, Claude
dc.contributor.authorRosseel, Erik
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorKerner, Christoph
dc.contributor.authorMertens, Sofie
dc.contributor.authorKittl, Jorge
dc.contributor.authorVerleysen, Eveline
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLauwers, Anne
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorMathukrishnan, S.
dc.contributor.authorSrinivasan, S.
dc.contributor.authorMayur, A.J.
dc.contributor.authorSchreutelkamp, Rob
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-18T01:20:18Z
dc.date.available2021-10-18T01:20:18Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15953
dc.sourceIIOimport
dc.titleSilicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology
dc.typeProceedings paper
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage23
dc.source.endpage26
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2009
dc.source.conferencelocationBaltimore, MD USA
imec.availabilityPublished - open access


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