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Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorOkawa, Hiroshi
dc.contributor.authorSchram, Tom
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorBiesemans, Serge
dc.contributor.authorNakabayashi, Takashi
dc.contributor.authorIkeda, Atsushi
dc.contributor.authorNiwa, Masaaki
dc.date.accessioned2021-10-18T01:22:09Z
dc.date.available2021-10-18T01:22:09Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15958
dc.sourceIIOimport
dc.titleQuantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics
dc.typeJournal article
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.source.peerreviewyes
dc.source.beginpage114504
dc.source.journalJournal of Applied Physics
dc.source.issue11
dc.source.volume106
imec.availabilityPublished - imec


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