Show simple item record

Extreme scaled gate dielectrics by using ALD HfO2/SrTiO3 composite structures

dc.contributor.authorPierreux, Dieter
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorTois, E.
dc.contributor.authorSwerts, Johan
dc.contributor.authorSchram, Tom
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorConard, Thierry
dc.contributor.authorTseng, Joshua
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorMaes, Jan
dc.date.accessioned2021-10-18T01:42:47Z
dc.date.available2021-10-18T01:42:47Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16018
dc.sourceIIOimport
dc.titleExtreme scaled gate dielectrics by using ALD HfO2/SrTiO3 composite structures
dc.typeProceedings paper
dc.contributor.imecauthorPierreux, Dieter
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorMaes, Jan
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewyes
dc.source.beginpage263
dc.source.endpage274
dc.source.conferenceAtomic Layer Deposition Applications 5
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
dc.identifier.urlhttp://dx.doi.org/10.1149/1.3205061
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 25, issue 4


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record