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Influence of the substrate doping level on spreading resistance profiling

dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.contributor.authorSmith, H. E.
dc.date.accessioned2021-09-29T15:43:14Z
dc.date.available2021-09-29T15:43:14Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1602
dc.sourceIIOimport
dc.titleInfluence of the substrate doping level on spreading resistance profiling
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage404
dc.source.endpage407
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume14
imec.availabilityPublished - open access
imec.internalnotesPaper from the 3rd International Workshop on the Measurement and Characterisation of Ultra-Shallow Dopant Profiles in Semiconductors. Research Triangle Park, North Carolina, USA. March 1995.


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