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Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors

dc.contributor.authorPolspoel, Wouter
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAguilera, L.
dc.contributor.authorPorti, M.
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.date.accessioned2021-10-18T01:48:57Z
dc.date.available2021-10-18T01:48:57Z
dc.date.issued2009
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16036
dc.sourceIIOimport
dc.titleComparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage356
dc.source.endpage359
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume27
imec.availabilityPublished - open access


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