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Progressive degradation of TiN/SiON and TiN'/HfO2 gate stack triple gate SOI nFinFETs subjected to electrical stress

dc.contributor.authorRafi, J.M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorCampabadal, F.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T02:04:13Z
dc.date.available2021-10-18T02:04:13Z
dc.date.issued2009
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16075
dc.sourceIIOimport
dc.titleProgressive degradation of TiN/SiON and TiN'/HfO2 gate stack triple gate SOI nFinFETs subjected to electrical stress
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage453
dc.source.endpage458
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume27
imec.availabilityPublished - open access


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