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Impact of TiN metal gate thickness and the HfSiO nitridation on MuGFETs electrical performance

dc.contributor.authorRodrigues, Michele
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.date.accessioned2021-10-18T02:18:51Z
dc.date.available2021-10-18T02:18:51Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16112
dc.sourceIIOimport
dc.titleImpact of TiN metal gate thickness and the HfSiO nitridation on MuGFETs electrical performance
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage189
dc.source.endpage192
dc.source.conference10th International Conference on Ultimate Integration of Silicon - ULIS
dc.source.conferencedate18/03/2009
dc.source.conferencelocationAachen Germany
imec.availabilityPublished - open access


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