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DIBL study using trible gate unstrained and uniaxial/biaxial strained FinFETs

dc.contributor.authorSantos, S.D.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T02:36:50Z
dc.date.available2021-10-18T02:36:50Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16158
dc.sourceIIOimport
dc.titleDIBL study using trible gate unstrained and uniaxial/biaxial strained FinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage591
dc.source.endpage596
dc.source.conference24th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate31/08/2009
dc.source.conferencelocationNatal Brazil
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 23, issue 1


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