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Poly- silicon etch with diluted ammonia: application to replacement gate integration scheme

dc.contributor.authorSebaai, Farid
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorVos, Rita
dc.contributor.authorAbsil, Philippe
dc.contributor.authorChiarella, Thomas
dc.contributor.authorVrancken, Christa
dc.contributor.authorBoelen, Pieter
dc.contributor.authorBaiya, Evans
dc.date.accessioned2021-10-18T02:47:51Z
dc.date.available2021-10-18T02:47:51Z
dc.date.issued2009
dc.identifier.issn1662-9779
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16186
dc.sourceIIOimport
dc.titlePoly- silicon etch with diluted ammonia: application to replacement gate integration scheme
dc.typeJournal article
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorVrancken, Christa
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.source.peerreviewyes
dc.source.beginpage207
dc.source.endpage210
dc.source.journalSolid State Phenomena
dc.source.volume145-146
dc.identifier.urlhttp://www.scientific.net
imec.availabilityPublished - imec
imec.internalnotesPaper from 9th UCPSS Symposium (2008)


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