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Effects of growth parameters on the epitaxy of CoSi2//Si(100) formed by reactive deposition epitaxy

dc.contributor.authorVantomme, Andre
dc.contributor.authorDegroote, S.
dc.contributor.authorDekoster, J.
dc.contributor.authorBender, Hugo
dc.contributor.authorLangouche, G.
dc.date.accessioned2021-09-29T15:46:08Z
dc.date.available2021-09-29T15:46:08Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1618
dc.sourceIIOimport
dc.titleEffects of growth parameters on the epitaxy of CoSi2//Si(100) formed by reactive deposition epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorBender, Hugo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage505
dc.source.endpage510
dc.source.conferenceSilicide Thin Films - Fabrication, Properties, and Applications
dc.source.conferencedate27/11/1995
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 402


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