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Length dependent transition of the dominant 1/f noise mechanism in Si-passivated Ge-on-Si pMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorLeys, Frederik
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMitard, Jerome
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T03:07:17Z
dc.date.available2021-10-18T03:07:17Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16231
dc.sourceIIOimport
dc.titleLength dependent transition of the dominant 1/f noise mechanism in Si-passivated Ge-on-Si pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage281
dc.source.endpage284
dc.source.conference20th International Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate14/06/2009
dc.source.conferencelocationPisa Italy
imec.availabilityPublished - open access
imec.internalnotesAIP Conference Proceedings; Vol. 1129


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