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High-hole mobility silicon germaium on insulator substrates with high crystalline quality obtained by the germanium condensation technique

dc.contributor.authorSouriau, Laurent
dc.contributor.authorNguyen, Tuan
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorLoo, Roger
dc.contributor.authorTerzieva, Valentina
dc.contributor.authorCaymax, Matty
dc.contributor.authorCristoloveanu, Sorin
dc.contributor.authorMeuris, Marc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-18T03:18:19Z
dc.date.available2021-10-18T03:18:19Z
dc.date.issued2009
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16259
dc.sourceIIOimport
dc.titleHigh-hole mobility silicon germaium on insulator substrates with high crystalline quality obtained by the germanium condensation technique
dc.typeJournal article
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageH208
dc.source.endpageH213
dc.source.journalJournal of the Electrochemical Society
dc.source.issue3
dc.source.volume156
imec.availabilityPublished - open access


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