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Si1-xGex growth using Si3H8 by low temperature chemical vapor deposition

dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-18T03:29:11Z
dc.date.available2021-10-18T03:29:11Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16287
dc.sourceIIOimport
dc.titleSi1-xGex growth using Si3H8 by low temperature chemical vapor deposition
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage63
dc.source.endpage64
dc.source.conferenceAbstracts 6th International Conference on Silicon Epitaxy and Heterostructures - ICSI-6
dc.source.conferencedate17/05/2009
dc.source.conferencelocationLos Angeles, CA USA
imec.availabilityPublished - imec


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