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Electrical characterization and design optimization of FinFETs with TiN/HfO2 gate stack

dc.contributor.authorTsormpatzoglou, A.
dc.contributor.authorTassis, D.H.
dc.contributor.authorDimitriadis, C.A.
dc.contributor.authorMouis, Mireille
dc.contributor.authorGhibaudo, G.
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-18T03:45:08Z
dc.date.available2021-10-18T03:45:08Z
dc.date.issued2009
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16327
dc.sourceIIOimport
dc.titleElectrical characterization and design optimization of FinFETs with TiN/HfO2 gate stack
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.identifier.doi10.1088/0268-1242/24/12/125001
dc.source.peerreviewyes
dc.source.beginpage125001
dc.source.journalSemiconductor Science and Technology
dc.source.issue12
dc.source.volume24
imec.availabilityPublished - open access


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