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Electrochemical and analytical study of the Si etching mechanism in HF

dc.contributor.authorValckx, Nick
dc.contributor.authorVos, Rita
dc.contributor.authorRip, Jens
dc.contributor.authorDoumen, Geert
dc.contributor.authorMertens, Paul
dc.contributor.authorBearda, Twan
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-18T03:51:14Z
dc.date.available2021-10-18T03:51:14Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16341
dc.sourceIIOimport
dc.titleElectrochemical and analytical study of the Si etching mechanism in HF
dc.typeMeeting abstract
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorDoumen, Geert
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2102
dc.source.conference216th ECS Meeting
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesMeeting Abstracts; Vol. MA2009-02


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