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Dual silicide technology: WSix polycide gate and self-aligned CoSi2 source/drain

dc.contributor.authorFranssila, Samuli
dc.contributor.authorPalmans, Roger
dc.contributor.authorStone, M.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-09-29T12:41:25Z
dc.date.available2021-09-29T12:41:25Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/163
dc.sourceIIOimport
dc.titleDual silicide technology: WSix polycide gate and self-aligned CoSi2 source/drain
dc.typeProceedings paper
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage287
dc.source.endpage290
dc.source.conference24th European Solid State Device Research Conference - ESSDERC
dc.source.conferencedate11/09/1994
dc.source.conferencelocationEdinburgh UK
imec.availabilityPublished - open access


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