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A 35nm diameter vertical silicon nanowire short-gate tunnelFET

dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorIacopi, Francesca
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorVerhulst, Anne
dc.contributor.authorHeyns, Marc
dc.contributor.authorKunnen, Eddy
dc.contributor.authorNguyen, Duy
dc.contributor.authorDemand, Marc
dc.contributor.authorOng, Patrick
dc.contributor.authorLee, Willie
dc.contributor.authorMoonens, Jos
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandenberghe, William
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T04:30:55Z
dc.date.available2021-10-18T04:30:55Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16437
dc.sourceIIOimport
dc.titleA 35nm diameter vertical silicon nanowire short-gate tunnelFET
dc.typeProceedings paper
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.conferenceNanotechnology Workshop
dc.source.conferencedate13/06/2009
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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