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Electron transport properties of single donors in nanoscale Si MOSFETs

dc.contributor.authorVerduijn, J.
dc.contributor.authorLansbergen, G.
dc.contributor.authorTettamanzi, G.C.
dc.contributor.authorRahman, R.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorCollaert, Nadine
dc.contributor.authorKlimeck, G.
dc.contributor.authorHollenberg, L.
dc.contributor.authorRogge, S.
dc.date.accessioned2021-10-18T04:43:57Z
dc.date.available2021-10-18T04:43:57Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16467
dc.sourceIIOimport
dc.titleElectron transport properties of single donors in nanoscale Si MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage135
dc.source.endpage136
dc.source.conferenceSilicon Nanoelectronics Workshop
dc.source.conferencedate13/06/2009
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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