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Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge

dc.contributor.authorVincent, Benjamin
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-18T04:57:47Z
dc.date.available2021-10-18T04:57:47Z
dc.date.issued2009-12
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16499
dc.sourceIIOimport
dc.titleInfluence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage262112
dc.source.journalApplied Physics Letters
dc.source.issue26
dc.source.volume95
imec.availabilityPublished - imec


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