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Manufacturability issues for application of silicides in 0.25 μm CMOS process and beyond

dc.contributor.authorWang, Qingfeng
dc.contributor.authorLauwers, Anne
dc.contributor.authorJonckx, Franky
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorChen, Chun-Cho
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-09-29T15:51:46Z
dc.date.available2021-09-29T15:51:46Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1649
dc.sourceIIOimport
dc.titleManufacturability issues for application of silicides in 0.25 μm CMOS process and beyond
dc.typeProceedings paper
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage221
dc.source.endpage231
dc.source.conferenceSilicide Thin Films - Fabrication, Properties, and Applications
dc.source.conferencedate27/11/1995
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 402


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