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dc.contributor.authorWang, Wei-E
dc.contributor.authorLin, Han-Chung
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T05:10:39Z
dc.date.available2021-10-18T05:10:39Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16527
dc.sourceIIOimport
dc.titleCatalytic forming gas anneal on III-V/Ge MOS sytems
dc.typeProceedings paper
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage1194-A07-06
dc.source.conferenceHigh-k Dielectrics on Semiconductors with High Carrier Mobility
dc.source.conferencedate30/11/2009
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1194


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