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Millisecond flash lamp annealing of shallow implanted layers in Ge

dc.contributor.authorWündisch, C.
dc.contributor.authorPosselt, M.
dc.contributor.authorSchmidt, B.
dc.contributor.authorHeera, V.
dc.contributor.authorSchumann, T.
dc.contributor.authorMücklich, A.
dc.contributor.authorGrötzschel, R.
dc.contributor.authorSkorupa, W.
dc.contributor.authorClarysse, Trudo
dc.contributor.authorSimoen, Eddy
dc.contributor.authorHortenbach, H.
dc.date.accessioned2021-10-18T05:27:16Z
dc.date.available2021-10-18T05:27:16Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16565
dc.sourceIIOimport
dc.titleMillisecond flash lamp annealing of shallow implanted layers in Ge
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage252107
dc.source.journalApplied Physics Letters
dc.source.issue25
dc.source.volume95
imec.availabilityPublished - open access


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