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1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

dc.contributor.authorYan, L.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorOlsen, S.H.
dc.contributor.authorAkheyar, Amal
dc.contributor.authorClaeys, Cor
dc.contributor.authorO'Neill, A.G.
dc.date.accessioned2021-10-18T05:29:59Z
dc.date.available2021-10-18T05:29:59Z
dc.date.issued2009
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16571
dc.sourceIIOimport
dc.title1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1177
dc.source.endpage1182
dc.source.journalSolid-State Electronics
dc.source.issue11
dc.source.volume53
imec.availabilityPublished - open access


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