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Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

dc.contributor.authorZhang, Yan
dc.contributor.authorFischetti, Massimo
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-18T05:44:36Z
dc.date.available2021-10-18T05:44:36Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16604
dc.sourceIIOimport
dc.titlePhysical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
dc.typeJournal article
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage83704
dc.source.journalJournal of Applied Physics
dc.source.issue8
dc.source.volume106
imec.availabilityPublished - open access


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