dc.contributor.author | Agaiby, Rouzet M. B. | |
dc.contributor.author | Olsen, Sarah | |
dc.contributor.author | Eneman, Geert | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Augendre, Emmanuel | |
dc.contributor.author | O'Neill, Anthony G. | |
dc.date.accessioned | 2021-10-18T15:15:09Z | |
dc.date.available | 2021-10-18T15:15:09Z | |
dc.date.issued | 2010 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/16631 | |
dc.source | IIOimport | |
dc.title | Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices | |
dc.type | Journal article | |
dc.contributor.imecauthor | Eneman, Geert | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.orcidimec | Eneman, Geert::0000-0002-5849-3384 | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 419 | |
dc.source.endpage | 421 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 5 | |
dc.source.volume | 31 | |
imec.availability | Published - open access | |