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Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices

dc.contributor.authorAgaiby, Rouzet M. B.
dc.contributor.authorOlsen, Sarah
dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorO'Neill, Anthony G.
dc.date.accessioned2021-10-18T15:15:09Z
dc.date.available2021-10-18T15:15:09Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16631
dc.sourceIIOimport
dc.titleDirect measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage419
dc.source.endpage421
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume31
imec.availabilityPublished - open access


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