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Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices
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Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Agaiby, Rouzet M. B.
;
Olsen, Sarah
;
Eneman, Geert
;
Simoen, Eddy
;
Augendre, Emmanuel
;
O'Neill, Anthony G.
Journal
IEEE Electron Device Letters
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Acq. date: 2026-01-10
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Views
1922
since deposited on 2021-10-18
1
last month
Acq. date: 2026-01-10
Citations