Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Articles
Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices
Publication:
Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices
Date
2010
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
19859.pdf
237.63 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Agaiby, Rouzet M. B.
;
Olsen, Sarah
;
Eneman, Geert
;
Simoen, Eddy
;
Augendre, Emmanuel
;
O'Neill, Anthony G.
Journal
IEEE Electron Device Letters
Abstract
Description
Metrics
Views
1918
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1918
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations