Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices

dc.contributor.author	Agaiby, Rouzet M. B.
dc.contributor.author	Olsen, Sarah
dc.contributor.author	Eneman, Geert
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Augendre, Emmanuel
dc.contributor.author	O'Neill, Anthony G.
dc.contributor.imecauthor	Eneman, Geert
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Eneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-18T15:15:09Z
dc.date.available	2021-10-18T15:15:09Z
dc.date.embargo	9999-12-31
dc.date.issued	2010
dc.identifier.issn	0741-3106
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/16631
dc.source.beginpage	419
dc.source.endpage	421
dc.source.issue	5
dc.source.journal	IEEE Electron Device Letters
dc.source.volume	31
dc.title	Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: 19859.pdf Size: 237.63 KB Format: Adobe Portable Document Format Download
Publication available in collections:	Articles

Date