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Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain

dc.contributor.authorAmat, E.
dc.contributor.authorRodriguez, R.
dc.contributor.authorGonzalez, Mario
dc.contributor.authorMartin-Martinez, J.
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorBauer, M.
dc.contributor.authorVerheyen, Peter
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-18T15:15:32Z
dc.date.available2021-10-18T15:15:32Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16648
dc.sourceIIOimport
dc.titleChannel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
dc.typeProceedings paper
dc.contributor.imecauthorGonzalez, Mario
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceInternational Conference on Solid-State and Integrated Circuit Technology
dc.source.conferencedate1/11/2010
dc.source.conferencelocationShanghai Chaina
imec.availabilityPublished - open access


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