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BJT mode endurance on a 1T-RAM bulk FinFET device

dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDegraeve, Robin
dc.contributor.authorLu, Zhichao
dc.contributor.authorDe Wachter, Bart
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAltimime, Laith
dc.date.accessioned2021-10-18T15:15:46Z
dc.date.available2021-10-18T15:15:46Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16656
dc.sourceIIOimport
dc.titleBJT mode endurance on a 1T-RAM bulk FinFET device
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Wachter, Bart
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage1380
dc.source.endpage1382
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume31
imec.availabilityPublished - imec


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